Semiconductor device and module
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United States of America Patent
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Jul 19, 2022
Grant Date -
Jul 22, 2021
app pub date -
Nov 5, 2020
filing date -
Jan 17, 2020
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Abstract
A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface that face each other in a thickness direction, the first main surface containing a trench; an insulation layer on a surface of the trench; a first electrode layer on the insulation layer; a first dielectric layer on the first electrode layer; and a second electrode layer on the first dielectric layer, in which a thickness (L1) of the insulation layer, a thickness (L2) of the first electrode layer, and a thickness (L4) of the second electrode layer satisfy L1>L2>L4.
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