Metal gate structure of a CMOS semiconductor device and method of forming the same
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United States of America Patent
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Jul 19, 2022
Grant Date -
Mar 18, 2021
app pub date -
Nov 16, 2020
filing date -
Jul 22, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a substrate with an isolation region surrounding a P-active region and an N-active region, a first gate electrode comprising a first metal composition over the N-active region, and a second gate electrode with a center portion over the P-active region and an endcap portion over the isolation region. The endcap portion includes a first metal composition, and the center portion includes a second metal composition different from the first metal composition, and the center portion and the endcap portion do not overlap. An inner sidewall of the endcap portion is substantially aligned with a sidewall of the isolation region.
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