Semiconductor structure formation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11387369
APP PUB NO 20210193843A1
SERIAL NO

16723259

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Abstract

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An example apparatus includes forming a working surface of a substrate material. The example apparatus includes trench formed between two semiconductor structures on the working surface of the substrate material. The example apparatus further includes access lines formed on neighboring sidewalls of the semiconductor structures opposing a channel region separating a first source/drain region and a second source/drain region. The example apparatus further includes a time-control formed inhibitor material formed over a portion of the sidewalls of the semiconductor structures. The example apparatus further includes a dielectric material formed over the semiconductor structures to enclose a non-solid space between the access lines.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC8000 S FEDERAL WAY P O BOX 6 BOISE ID 83707-0006

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Figura, Thomas A Boise, US 77 1696
Hu, Shen Boise, US 13 18
Hull, Jeffery B Boise, US 23 33
Khandekar, Anish A Boise, US 42 222
Li, Xiao Boise, US 322 4192
Liu, Hung-Wei Meridian, US 49 96
Staller, Corey Boise, US 3 2
Xie, Zhiqiang Meridian, US 23 113

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