Phase-shift mask for extreme ultraviolet lithography

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United States of America

PATENT NO 11372323
APP PUB NO 20200209732A1
SERIAL NO

16814580

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Abstract

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A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chalykh, Roman Suwon-si, KR 4 19
Kim, SeongSue Seoul, KR 12 35
Lee, Taehoon Suwon-si, KR 48 311
Seo, Hwanseok Suwon-si, KR 5 7

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