EUV mask blank, photomask manufactured by using the EUV mask blank, lithography apparatus using the photomask and method of fabricating semiconductor device using the photomask
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Jun 28, 2022
Grant Date -
May 27, 2021
app pub date -
Jan 6, 2021
filing date -
Jan 6, 2021
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An extreme ultraviolet (EUV) mask blank is provided. The EUV mask blank includes a substrate having a first surface and a second surface opposed to each other, a reflective layer having first reflective layers and second reflective layers alternately stacked on the first surface of the substrate, a capping layer on the reflective layer, and a hydrogen absorber layer between the reflective layer and the capping layer, the hydrogen absorber layer configured to store hydrogen and being in contact with the capping layer.
First Claim
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International Classification(s)
- 2021 Application Filing Year
- H01L Class
- 28775 Applications Filed
- 15216 Patents Issued To-Date
- 52.88 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 3 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 3.5 Year Payment | $1600.00 | $800.00 | $400.00 | Dec 28, 2025 |
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