Epitaxial semiconductor material regions for transistor devices and methods of forming same
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United States of America Patent
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Jun 14, 2022
Grant Date -
Jul 29, 2021
app pub date -
Jan 28, 2020
filing date -
Jan 28, 2020
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Abstract
One illustrative transistor of a first dopant type disclosed herein includes a gate structure positioned above a semiconductor substrate and first and second overall epitaxial cavities formed in the semiconductor substrate on opposite sides of the gate structure. The device also includes a counter-doped epitaxial semiconductor material positioned proximate a bottom of each of the first and second overall epitaxial cavities, wherein the counter-doped epitaxial semiconductor material is doped with a second dopant type that is opposite to the first dopant type, and a same-doped epitaxial semiconductor material positioned in each of the first and second overall epitaxial cavities above the counter-doped epitaxial semiconductor material, wherein the same-doped epitaxial semiconductor material is doped with a dopant of the first dopant type.
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