High power radio frequency switches with low leakage current and low insertion loss
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United States of America Patent
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May 31, 2022
Grant Date -
Apr 22, 2021
app pub date -
Dec 23, 2020
filing date -
Apr 25, 2019
priority date (Note) -
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Abstract
High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of terminals including an antenna terminal, a receive terminal, and a transmit terminal. The RF switch also includes a plurality of transistors that are controllable to set the RF switch in a first mode or a second mode, and an inductor electrically connected between the antenna terminal and the receive terminal.
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