Amorphous oxide semiconductor film, oxide sintered body, thin film transistor, sputtering target, electronic device, and amorphous oxide semiconductor film production method

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United States of America Patent

PATENT NO 11342466
APP PUB NO 20200052130A1
SERIAL NO

16482226

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Abstract

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A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu-K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

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Patent Owner(s)

  • IDEMITSU KOSAN CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Kazuyoshi Sodegaura, JP 118 4436
Shibata, Masatoshi Sodegaura, JP 45 291

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