Method for producing a superjunction device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11342187
APP PUB NO 20200243340A1
SERIAL NO

16850309

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Abstract

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Forming a semiconductor arrangement includes providing a first semiconductor layer having a first surface, forming a first plurality of trenches in the first surface of the first semiconductor layer, each of the trenches in the first plurality having first and second sidewalls that extend from the first surface to a bottom of the respective trench, implanting first type dopant atoms into the first and second sidewalls of each of the trenches in the first plurality, implanting second type dopant atoms into the first and second sidewalls of each of the trenches in the first plurality, and annealing the semiconductor arrangement to simultaneously activate the first type dopant atoms and the second type dopant atoms.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AGVILLACH VILLACH CARINTHIA

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirler, Franz Isen, DE 437 5348
Laven, Johannes Georg Taufkirchen, DE 124 734
Mauder, Anton Kolbermoor, DE 350 3377
Schulze, Hans-Joachim Taufkirchen, DE 693 4306
Schustereder, Werner Villach, AT 66 284
Treiber, Maximilian Munich, DE 12 23
Tutuc, Daniel St. Niklas an der Drau, AT 23 33
Voerckel, Andreas Finkenstein, AT 24 57
Weber, Hans Bayerisch Gmain, DE 165 973

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