Germanium-on-silicon laser in CMOS technology

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United States of America

PATENT NO 11329455
APP PUB NO 20200266609A1
SERIAL NO

16867666

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Abstract

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A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS (CROLLES 2) SASCROLLES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Boeuf, Frederic Le Versoud, FR 19 46
Boucaud, Philippe Paris, FR 5 4
El, Kurdi Moustafa Cachan, FR 4 2
Prost, Mathias Tremblay-En-Franc, FR 3 2

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