Ge—GaAs heterojunction-based SWIR photodetector

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United States of America

PATENT NO 11322640
APP PUB NO 20200303581A1
SERIAL NO

16819098

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Abstract

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Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

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TRIEYE LTD6789124 TEL-AVIV

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bakal, Avraham Tel-Aviv, IL 27 17
Immer, Vincent Zichron-Yaakov, IL 6 7
Kapach, Omer Jerusalem, IL 27 18
Katzir, Eran Jerusalem, IL 11 515
Levy, Uriel Kiryat Ono, IL 36 125

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