Semiconductor body
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United States of America
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Apr 26, 2022
Grant Date -
Aug 1, 2019
app pub date -
Oct 23, 2017
filing date -
Oct 23, 2017
priority date (Note) -
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Abstract
A semiconductor body is disclosed. In an embodiment a semiconductor body includes an n-doped region comprising a first layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their doping concentration, and wherein the first and second layers of each pair have the same material composition except for their doping and a second layer sequence comprising pairs of alternating layers, wherein a first layer and a second layer of each pair differ in their material composition, an active region, wherein the second layer sequence is disposed between the first layer sequence and the active region and a p-doped region, wherein the active region is disposed between the n-doped region and the p-doped region.
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