Mask blank, phase shift mask, and method of manufacturing semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
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Apr 26, 2022
Grant Date -
Feb 18, 2021
app pub date -
Feb 20, 2019
filing date -
Feb 20, 2019
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is a mask blank for a phase shift mask including an etching stopper film. The mask blank has a structure where a transparent substrate has stacked thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n2 of 2.5 or more and 3.1 or less for light of 193 nm wavelength and an extinction coefficient k2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n2 and the extinction coefficient k2 satisfy at least one of a set of specified conditions.
First Claim
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International Classification(s)
- 2019 Application Filing Year
- H01L Class
- 31892 Applications Filed
- 24691 Patents Issued To-Date
- 77.43 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 3 Age
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