Deep ultraviolet LED and method for producing the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11309454
APP PUB NO 20210036186A1
SERIAL NO

16964881

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Abstract

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A deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies λ/2n1Deff (where λ is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ, the order m of a formula of the Bragg condition: mλ/n2Deff=2a (where m is the order, λ is the design wavelength, n2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.

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Patent Owner(s)

  • MARUBUN CORPORATION; SHIBAURA MACHINE CO., LTD.; INSTITUTE OF PHYSICAL AND CHEMICAL RESEARCH(RIKEN); ULVAC, INC.; TOKYO OHKA KOGYO CO., LTD.; NIPPON TUNGSTEN CO. LTD.; DAI NIPPON PRINTING CO., LTD.; DOWA HOLDINGS CO. LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aoyama, Yohei Kanagawa, JP 38 49
Furuta, Kanji Kanagawa, JP 1 0
Hirayama, Hideki Saitama, JP 90 670
Iwai, Takeshi Kanagawa, JP 75 842
Iwaisako, Yasushi Fukuoka, JP 1 0
Jo, Masafumi Saitama, JP 6 23
Kamimura, Ryuichiro Kanagawa, JP 12 110
Kashima, Yukio Tokyo, JP 9 87
Kokubo, Mitsunori Shizuoka, JP 40 244
Maeda, Noritoshi Saitama, JP 3 23
Matsuura, Eriko Tokyo, JP 9 76
Nagano, Tsugumi Tokyo, JP 1 0
Osada, Yamato Kanagawa, JP 11 86
Tashiro, Takaharu Shizuoka, JP 16 131
Watanabe, Yasuhiro Tokyo, JP 262 2220

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