Deep ultraviolet LED and method for producing the same
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United States of America
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Apr 19, 2022
Grant Date -
Feb 4, 2021
app pub date -
Jan 25, 2019
filing date -
Jan 25, 2019
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Abstract
A deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies λ/2n1Deff (where λ is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ, the order m of a formula of the Bragg condition: mλ/n2Deff=2a (where m is the order, λ is the design wavelength, n2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.

First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- MARUBUN CORPORATION; SHIBAURA MACHINE CO., LTD.; INSTITUTE OF PHYSICAL AND CHEMICAL RESEARCH(RIKEN); ULVAC, INC.; TOKYO OHKA KOGYO CO., LTD.; NIPPON TUNGSTEN CO. LTD.; DAI NIPPON PRINTING CO., LTD.; DOWA HOLDINGS CO. LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Aoyama, Yohei | Kanagawa, JP | 38 | 49 |
Furuta, Kanji | Kanagawa, JP | 1 | 0 |
Hirayama, Hideki | Saitama, JP | 90 | 670 |
Iwai, Takeshi | Kanagawa, JP | 75 | 842 |
Iwaisako, Yasushi | Fukuoka, JP | 1 | 0 |
Jo, Masafumi | Saitama, JP | 6 | 23 |
Kamimura, Ryuichiro | Kanagawa, JP | 12 | 110 |
Kashima, Yukio | Tokyo, JP | 9 | 87 |
Kokubo, Mitsunori | Shizuoka, JP | 40 | 244 |
Maeda, Noritoshi | Saitama, JP | 3 | 23 |
Matsuura, Eriko | Tokyo, JP | 9 | 76 |
Nagano, Tsugumi | Tokyo, JP | 1 | 0 |
Osada, Yamato | Kanagawa, JP | 11 | 86 |
Tashiro, Takaharu | Shizuoka, JP | 16 | 131 |
Watanabe, Yasuhiro | Tokyo, JP | 262 | 2220 |
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