Measuring height difference in patterns on semiconductor wafers

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11301983
APP PUB NO 20200380668A1
SERIAL NO

16995077

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Abstract

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An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

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Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Avniel, Yan Rehovot, IL 4 3
Baram, Mor Nes-Ziona, IL 6 6
Girmonsky, Doron Raanana, IL 15 214
Khristo, Sergey Ashdod, IL 5 5
Kris, Roman Jerusalem, IL 19 35
Levi, Shimon Kiryat Tivon, IL 10 57
Schwarzband, Ishai Or-Yehuda, IL 25 136

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