Lateral double diffused metal oxide semiconductor and method of fabricating same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11296222
APP PUB NO 20210028307A1
SERIAL NO

16924737

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Abstract

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A lateral double diffused metal oxide semiconductor (LDMOS) transistor and a semiconductor can reduce the size of the entire power block and can decrease costs by preventing formation of an edge termination region between adjacent device tips or ends along a width direction when the corresponding LDMOS transistor cell has a limited width and the LDMOS transistor is a multi-finger LDMOS transistor.

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Patent Owner(s)

  • DB HITEK CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Joo-Hyung Seoul, KR 46 575

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