Reticle fabrication method and semiconductor device fabrication method including the same

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United States of America

PATENT NO 11294290
APP PUB NO 20210165333A1
SERIAL NO

16911819

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Abstract

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Disclosed are reticle fabrication methods and semiconductor device fabrication methods. The reticle fabrication method includes performing a photolithography process on a test substrate using a first reticle having first patterns, measuring the test substrate to obtain measured images, designing a second reticle having second patterns, redesigning the second reticle based on a margin of the photolithography process, and manufacturing the redesigned second reticle. Redesigning the second reticle includes obtaining sample images from the measured images when the first patterns are the same as the second patterns, obtaining contour images that have contours of sample patterns in the sample images, overlapping the contours to obtain a contour overlay value, and comparing the contour overlay value with a reference value to determine defects of the second patterns.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Woo-Yong Hwaseong-si, KR 4 1
Kim, Sangwook Yongin-si, KR 107 874
Yang, Jaewon Suwon-si, KR 41 108

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