Pattern formation method using a photo mask for manufacturing a semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11294286
APP PUB NO 20200004137A1
SERIAL NO

16287450

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Abstract

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A photo mask for manufacturing a semiconductor device includes a first pattern extending in a first direction, a second pattern extending in the first direction and aligned with the first pattern, and a sub-resolution pattern extending in the first direction, disposed between an end of the first pattern and an end of the second pattern. A width of the first pattern and a width of the second pattern are equal to each other, and the first pattern and the second pattern are for separate circuit elements in the semiconductor device.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Shih-Ming Hsinchu, TW 192 1880
Hou, Yuan-Te Hsinchu, TW 79 887
Hsieh, Ken-Hsien Taipei, TW 113 1847
Huang, Cheng-I Hsinchu, TW 41 381
Lai, Chien-Wen Hsinchu, TW 52 91
Lai, Chih-Ming Hsinchu, TW 485 10832
Lin, Chin-Hsiang Hsinchu, TW 424 6439
Liu, Ru-Gun Hsinchu County, TW 404 6961

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