Control of p-contact resistance in a semiconductor light emitting device
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United States of America
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Mar 29, 2022
Grant Date -
Nov 26, 2020
app pub date -
Aug 12, 2020
filing date -
Aug 12, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.
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