Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods
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United States of America
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Mar 29, 2022
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Aug 29, 2019
app pub date -
Feb 23, 2018
filing date -
Feb 23, 2018
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Abstract
A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.
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