Semiconductor device including carrier injection layers
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United States of America
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Mar 29, 2022
Grant Date -
Jul 16, 2020
app pub date -
Mar 30, 2020
filing date -
Mar 30, 2020
priority date (Note) -
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Abstract
In a semiconductor device in which an IGBT region having an IGBT element and an FWD region having an FWD element are formed to a semiconductor substrate, a plurality of carrier injection layers electrically connected with a second electrode and configuring a PN junction with a field stop layer is disposed in a cathode layer. When an impurity concentration of the field stop layer is defined as Nfs [cm−3], and a length of a shortest portion of each of the plurality of carrier injection layers along a planar direction of the semiconductor substrate is defined as L1 [μm], the plurality of carrier injection layers satisfies a relationship of L1>6.8×10−16×Nfs+20.
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