Bias circuits and improved linearity bias schemes for RF power devices
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United States of America
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Mar 22, 2022
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N/A
app pub date -
Jan 27, 2021
filing date -
Jan 27, 2021
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Abstract
A radio frequency (“RF”) power device includes a RF power transistor, and a bias circuit coupled between a reference voltage input and an input terminal of the RF power transistor. The bias circuit includes an impedance control circuit that is configured to vary an impedance of the bias circuit at the input terminal of the RF power transistor responsive to a RF input signal provided to the input terminal, and/or a current control circuit that is configured to control a bias current provided to the input terminal of the RF power transistor responsive to variations in operating characteristics of the RF power transistor. Related RF power amplifiers and device packages are also discussed.
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