Film formation apparatus and method of manufacturing semiconductor device
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United States of America
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Mar 22, 2022
Grant Date -
Jul 30, 2020
app pub date -
Jan 8, 2020
filing date -
Jan 8, 2020
priority date (Note) -
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Abstract
A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
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