Reflection mode photomask
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United States of America
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Mar 8, 2022
Grant Date -
May 21, 2020
app pub date -
Jan 27, 2020
filing date -
Jan 27, 2020
priority date (Note) -
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Abstract
A reflection mode photomask includes a substrate. The reflection mode photomask further includes a reflective multilayer over the substrate. The reflection mode photomask further includes a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks has an etch stop layer, an absorber layer and an ARC layer, wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5, and a sidewall roughness of each absorber stack of the plurality of absorber stacks is smaller than 3 nanometers (nm).
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