Integrated circuit

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11264378
APP PUB NO 20200126976A1
SERIAL NO

16724024

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Importance

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Abstract

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A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chung-Long Hsinchu, TW 62 1057
Chao, Chih-Ping Hsinchu, TW 47 541
Chen, Chun-Hung Hsinchu County, TW 246 1469
Chen, Hsiang-Chi Taichung, TW 4 29
Chen, Shao-Yu Tainan, TW 16 81
Hsu, Cheng-Chang Hsinchu County, TW 4 24
Hsu, Ching-Chung Taichung, TW 17 106
Tsai, Kuan-Chi Kaohsiung, TW 34 188
Tsai, Wei-Kung Tainan, TW 18 109
Wang, Yi-Sin Tainan, TW 7 27

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