Gate-all-around field effect transistor having multiple threshold voltages
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United States of America Patent
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Feb 8, 2022
Grant Date -
Aug 13, 2020
app pub date -
Jan 16, 2020
filing date -
Jan 4, 2017
priority date (Note) -
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Abstract
One example of an apparatus includes a conducting channel region. The conducting channel region includes a plurality of epitaxially grown, in situ doped conducting channels arranged in a spaced apart relation relative to each other. A source positioned at a first end of the conducting channel region, and a drain positioned at a second end of the conducting channel region. A gate surrounds all sides of the conducting channel region and fills in spaces between the plurality of epitaxially grown, in situ doped conducting channels.
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