Reflective mask and fabricating method thereof

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United States of America Patent

PATENT NO 11243461
APP PUB NO 20200133113A1
SERIAL NO

16656227

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Abstract

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A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Pei-Cheng Taipei, TW 111 530
Wu, Tsiao-Chen Hsinchu County, TW 26 431

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Patent Citation Ranking

  • 2 Citation Count
  • G03F Class
  • 72.42 % this patent is cited more than
  • 3 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges16546271201 - 1011 - 2021 - 300100200300400500600700800900100011001200130014001500160017001800

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