Polycrystalline silicon rod and method for producing polycrystalline silicon rod
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United States of America Patent
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Feb 8, 2022
Grant Date -
Jan 17, 2019
app pub date -
Jul 3, 2018
filing date -
Jul 12, 2017
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To provide polycrystalline silicon suitable as a raw material for production of single-crystalline silicon. A D/L value is set within the range of less than 0.40 when multiple pairs of silicon cores are placed in a reaction furnace in production of a polycrystalline silicon rod having a diameter of 150 mm or more by deposition according to a chemical vapor deposition process and it is assumed that the average value of the final diameter of the polycrystalline silicon rod is defined as D (mm) and the mutual interval between the multiple pairs of silicon cores is defined as L (mm).
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