Nano-twinned copper layer, method for manufacturing the same, and substrate comprising the same
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United States of America Patent
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Feb 8, 2022
Grant Date -
Jun 10, 2021
app pub date -
Nov 13, 2020
filing date -
Dec 6, 2019
priority date (Note) -
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status (Latency Note)
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Abstract
A nano-twinned copper layer is disclosed, wherein over 50% of a volume of the nano-twinned copper layer comprises a plurality of columnar crystal grains, the plurality of columnar crystal grains connect to each other, at least 70% of the plurality of columnar crystal grains are formed by a plurality of nano-twins stacking in an orientation of a crystal axis, and an angle included between two adjacent columnar crystal grains is greater 20° and less than or equal to 60°. In addition, a method for manufacturing the nano-twinned copper layer and a substrate comprising the same are also disclosed.
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International Classification(s)
- C25D:PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC ....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- H01B:CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATER....
- C30B:SINGLE-CRYSTAL GROWTH
- B32B:LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA....
- H05K:PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAIL....
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