Thin-film transistor including source-drain electrodes connected to a semiconducting film and extending through a semiconductor auxiliary film
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United States of America
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Feb 1, 2022
Grant Date -
Aug 20, 2020
app pub date -
Jul 22, 2019
filing date -
Jul 22, 2019
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor film, an interlayer insulating film, a source-drain electrode, and a semiconductor auxiliary film. The semiconductor film includes an oxide semiconductor material and has a channel region and a low-resistance region. The low-resistance region has an electric resistance lower than an electric resistance of the channel region. The interlayer insulating film covers the semiconductor film and has a through-hole opposed to the low-resistance region. The source-drain electrode includes a source electrode and a drain electrode and is electrically coupled to the semiconductor film through the through-hole. The semiconductor auxiliary film is in contact with the low-resistance region of the semiconductor film, reduces an electric resistance of the semiconductor film, and has a first opening at least on a part of a portion opposed to the through-hole.
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