Importance

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Abstract

Method for making a transistor, comprising:

making, on a substrate, a gate surrounded by a dielectric material;depositing a stop layer on the gate and the dielectric material;etching the stop layer in accordance with an active region pattern, forming a channel location located on the gate;etching the dielectric material located in the active region pattern, forming source and drain locations;depositing a semimetal material in the channel, source and drain locations;planarizing the semimetal material;crystallizing the semimetal material, forming the channel and the source and drain;and wherein the semimetal material of the channel is semiconductive and the semimetal material of the source and drain is electrically conductive.

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First Claim