Non-polar or semi-polar GaN wafer

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United States of America

PATENT NO 11236439
APP PUB NO 20200032420A1
SERIAL NO

16583759

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Abstract

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A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI CHEMICAL CORPORATION1-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8251

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Namita, Hideo Tokyo, JP 14 36
Tashiro, Masayuki Tokyo, JP 23 84
Tsukada, Yusuke Tokyo, JP 20 89

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