Method of fabricating a semiconductor device
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United States of America
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Jan 4, 2022
Grant Date -
Feb 18, 2021
app pub date -
Apr 30, 2020
filing date -
Apr 30, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
A method of fabricating a semiconductor device including preparing a substrate including a wafer inner region and a wafer edge region, the wafer inner region including a chip region and a scribe lane region, sequentially stacking a mold layer and a supporting layer on the substrate, forming a first mask layer on the supporting layer, the first mask layer including a first stepped region on the wafer edge region, forming a step-difference compensation pattern on the first stepped region, forming a second mask pattern including openings, on the first mask layer and the step-difference compensation pattern, and sequentially etching the first mask layer, the supporting layer, and the mold layer using the second mask pattern as an etch mask to form a plurality of holes in at least the mold layer may be provided.
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