RF capacitive coupled dual frequency etch reactor

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United States of America

PATENT NO 11217434
APP PUB NO 20200312624A1
SERIAL NO

16473744

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Abstract

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In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

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Patent Owner(s)

Patent OwnerAddress
EVATEC AG8890 FLUMS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Weichart, Johannes Balzers, LI 6 13
Weichart, Jurgen Balzers, LI 28 219

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