Non-volatile memory device and program method of a non-volatile memory device
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United States of America
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Jan 4, 2022
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Oct 28, 2021
app pub date -
Jan 13, 2017
filing date -
Jan 13, 2017
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Abstract
A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.
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