Semiconductor device
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United States of America
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Dec 28, 2021
Grant Date -
Jul 30, 2020
app pub date -
Apr 14, 2020
filing date -
Apr 14, 2020
priority date (Note) -
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Abstract
A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.
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