Method of producing semiconductor epitaxial wafer and method of producing semiconductor device
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United States of America Patent
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Dec 7, 2021
Grant Date -
Nov 26, 2020
app pub date -
Jan 8, 2019
filing date -
Feb 27, 2018
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Abstract
The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing carbon, phosphorus, and hydrogen as constituent elements to form a modified layer that is located in a surface layer portion of the semiconductor wafer and that contains the constituent elements of the cluster ions as a solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. The ratio y/x of the number y of the phosphorus atoms with respect to the number x of the carbon atoms satisfies 0.5 or more and 2.0 or less, where the number of atoms of carbon, phosphorus, and hydrogen in the cluster ions is expressed by CxPyHz (x, y, and z are integers each equal to or more than 1).
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