Memory device supporting skip calculation mode and method of operating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11194579
APP PUB NO 20190258487A1
SERIAL NO

16199679

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Abstract

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A memory device includes a memory cell array formed in a semiconductor die, the memory cell array including a plurality of memory cells to store data and a calculation circuit formed in the semiconductor die. The calculation circuit performs calculations based on broadcast data and internal data and omits the calculations with respect to invalid data and performs the calculations with respect to valid data based on index data in a skip calculation mode, where the broadcast data are provided from outside the semiconductor die, the internal data are read from the memory cell array, and the index data indicates whether the internal data are the valid data or the invalid data. Power consumption is reduced by omitting the calculations and the read operation with respect to the invalid data through the skip calculation mode based on the index data.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Chan-Kyung Hwaseong-si, KR 45 721
Park, Sung-Ho Hwaseong-si, KR 87 983
Park, Yong-Sik Anyang-si, KR 8 53
Shin, Hyun-Sung Seoul, KR 12 101
Shin, Sang-Hoon Goyang-si, KR 63 460

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