Method for forming a superjunction transistor device
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United States of America Patent
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Nov 30, 2021
Grant Date -
Jun 18, 2020
app pub date -
Dec 16, 2019
filing date -
Dec 17, 2018
priority date (Note) -
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Abstract
A method and a transistor device are disclosed. The method includes: forming first regions of a first doping type and second regions of a second doping type in an inner region and an edge region of a semiconductor body; and forming body regions and source regions of transistor cells in the inner region of the semiconductor body. Forming the first regions and second regions includes: forming semiconductor layers one on top of the other; and in each of the semiconductor layers and before forming a respective next one of the semiconductor layers, forming trenches in the inner region and the edge region and implanting dopant atoms into a first sidewall and a second sidewall of each trench. Implanting the dopant atoms into at least one of the semiconductor layers includes partly covering the trenches in the edge region during an implantation process.
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