Semiconductor arrangement

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11177368
APP PUB NO 20190245061A1
SERIAL NO

16384164

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Abstract

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Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shu-Han Hsinchu, TW 42 49
Chen, Wei-Chieh Taichung, TW 31 94
Ko, Chih-Hsin Fongshan, TW 216 11072
Lin, Hao-Hsiung Taipei, TW 23 81
Lin, You-Ru New Taipei, TW 33 1313
Wann, Clement Hsingjen Carmel, US 301 17658
Wu, Cheng-Hsien Hsinchu, TW 195 5583

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