Method for forming stressor, semiconductor device having stressor, and method for forming the same
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United States of America Patent
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Nov 2, 2021
Grant Date -
Apr 30, 2020
app pub date -
Dec 23, 2019
filing date -
Jul 29, 2016
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.
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