Method of forming isolation dielectrics for stacked field effect transistors (FETs)

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United States of America Patent

PATENT NO 11158738
APP PUB NO 20200403097A1
SERIAL NO

16548209

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Abstract

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A method of forming a stacked field effect transistor (FET) circuit is provided. The method includes providing a first wafer and a second wafer, forming a first dielectric layer on a surface of the first wafer, forming a second dielectric layer on a surface of the second wafer, and bonding the first wafer to the second wafer at the first dielectric layer and the second dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD416 MAETAN 3-DONG YEONGTONG-GU SUWON-SI GYEONGGI-DO 443-772

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gerousis, Vassilios Georgetown, US 21 477
Rodder, Mark Dallas, US 16 165
Wang, Wei-E Austin, US 34 438

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