Ballistic field-effect transistors based on Bloch resonance and methods of operating a transistor
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United States of America Patent
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Sep 28, 2021
Grant Date -
Apr 23, 2020
app pub date -
Oct 17, 2019
filing date -
Oct 17, 2018
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Abstract
A semiconductor device includes a source, a drain, and a channel electrically connected to the source and the drain. The channel has a channel length from the drain to the source which is less than or equal to an electron mean free path of the channel material. A first gate has two arms, each extending between the drain and the source (i.e., at least a portion of the distance between the source and the drain). Each arm of the first gate is disposed proximate to a corresponding first and second edge of the channel. Each arm of the first gate has a periodic profile along an inner boundary, wherein the periodic profiles of each arm are offset from each other such that a distance between the arms is constant. A Bloch voltage applied to the first gate will reduce the effective channel with such that Bloch resonance conditions are met.
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