Semiconductor device and method of manufacturing thereof
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United States of America Patent
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Sep 28, 2021
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May 13, 2019
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Jun 8, 2018
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Abstract
In a semiconductor device including a plurality of memory regions formed of split-gate type MONOS memories, threshold voltages of memory cells are set to different values for each memory region. Memory cells having different threshold voltages are formed by forming a metal film, which is a work function film constituting a memory gate electrode of a memory cell in a data region, and a metal film, which is a work function film constituting a memory gate electrode of a memory cell in a code region, of different materials or different thicknesses.
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