Method of producing etching mask, etching mask precursor, and oxide layer, and method of manufacturing thin film transistor

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United States of America Patent

PATENT NO 11133191
SERIAL NO

16586021

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Abstract

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The etching mask 80 for screen printing according to one embodiment of the present invention includes aliphatic polycarbonate. Further, the method of producing an oxide layer (the channel 44) according to one embodiment of the present invention includes: an etching-mask forming step of forming a pattern of the etching mask 80 including aliphatic polycarbonate; a contact step of, after the etching-mask forming step, contacting the oxide layer with a solution for dissolving a portion of the oxide layer (the channel 44) which is not protected by the etching mask 80; and a heating step of, after the contact step, heating the oxide layer (the channel 44) and the etching mask 80 to or above a temperature at which the etching mask 80 is decomposed.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO SEIKA CHEMICALS CO LTDJAPAN
JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY1-1 ASAHI-DAI NOMI-SHI ISHIKAWA 923-1292

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujimoto, Nobutaka Osaka, JP 27 135
Fukada, Kazuhiro Hiroshima, JP 11 38
Inoue, Satoshi Nagano, JP 511 10547
Nishioka, Kiyoshi Hyogo, JP 30 59
Shimoda, Tatsuya Ishikawa, JP 214 10119
Suzuki, Masahiro Hyogo, JP 505 7194

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