Wet etch apparatus and method of using the same

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United States of America Patent

PATENT NO 11107707
APP PUB NO 20200168479A1
SERIAL NO

16437775

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Abstract

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A method includes dispensing a chemical solution including charged ions onto a semiconductor substrate to chemically etch a target structure on the semiconductor substrate, and applying an electric field on the semiconductor substrate during dispensing the chemical solution on the semiconductor substrate, such that the charged ions in the chemical solution are moved in response to the electric field.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liao, Han-Wen Taichung, TW 21 33
Lu, Hong-Ting Taichung, TW 4 0

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