Semiconductor memory device and semiconductor device
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United States of America Patent
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Aug 24, 2021
Grant Date -
Oct 19, 2017
app pub date -
Apr 18, 2017
filing date -
Apr 18, 2016
priority date (Note) -
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Abstract
A semiconductor memory device includes: a substrate including a cell region and a connection region; a first word line stack comprising a plurality of first word lines that extend to the connection region and are stacked on the cell region; a second word line stack comprising a plurality of second word lines that extend to the connection region and are stacked on the cell region, the second word line being adjacent to the first word line stack; vertical channels in the cell region of the substrate, the vertical channels being connected to the substrate and coupled with the plurality of first and second word lines; a bridge region that connects the first word lines of the first word line stack with the second word lines of the second word line stack; and a local planarized region under the bridge region.
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