Methods for forming semiconductor devices
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United States of America Patent
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Jul 13, 2021
Grant Date -
Mar 7, 2019
app pub date -
Nov 1, 2018
filing date -
Jan 20, 2016
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Abstract
A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, are respectively correspond to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.
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