High-efficiency long-wavelength light-emitting device
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United States of America Patent
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Jun 29, 2021
Grant Date -
Sep 26, 2019
app pub date -
May 23, 2017
filing date -
May 26, 2016
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Abstract
A long-wavelength light emitting device is disclosed. The long-wavelength light emitting device comprises: a first conductive semi-conductor layer; an active layer that is located on the first conductive semi-conductor layer and that has a quantum well structure; and a second conductive semi-conductor layer that is located on the active layer. The active layer comprises: one or more well layers including a nitride-based semi-conductor having 21% or more In; two barrier layers located in upper and lower parts of the well layers, and located between the well layers and the barrier layers, wherein the upper capping layers have a bigger band-gap energy relative to the barrier layers, and the upper capping layers and the well layers are in contact.
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