High electron mobility transistor and methods for manufacturing the same
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United States of America Patent
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Jun 29, 2021
Grant Date -
Jan 2, 2020
app pub date -
Jun 26, 2019
filing date -
Jun 28, 2018
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Abstract
A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.
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